PUMT1,115

The Nexperia PUMT1,115 is a dual PNP bipolar junction transistor (BJT) array. It is designed for surface mount applications and comes in a 6-TSSOP package. This transistor offers a voltage rating of 40V and can handle a continuous collector current of up to 100nA (ICBO). Its DC current gain (hFE) is a minimum of 120 at 1mA and 6V, with a saturation voltage (Vce) of 200mV maximum at 5mA and 50mA. The device has a transition frequency of 100MHz and a power dissipation of 300mW. The operating temperature range is from -55°C to 150°C (TJ).

This component is suitable for various electronic circuits requiring dual PNP transistor functionality in a compact surface mount form factor. Its specifications make it a viable option for signal amplification and switching applications where space is a constraint. The RoHS3 compliance indicates adherence to certain environmental standards.

Key electrical characteristics include a 40V collector-emitter voltage and a 100nA leakage current. The high DC current gain and low saturation voltage are beneficial for efficient operation. The 6-TSSOP package is standard for many surface mount designs, facilitating automated assembly processes.