| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19,020 pcs
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19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PUMH4,115 from Nexperia USA Inc. is a pre-biased bipolar junction transistor (BJT) array. This component features two NPN transistors integrated into a single package, simplifying circuit design and reducing component count. It is designed for surface mount applications and comes in a 6-TSSOP, SC-88, or SOT-363 package.
Key electrical characteristics include a maximum voltage rating of 50V and a continuous collector current of 100mA. The device offers a power dissipation of 300mW. It has a minimum DC current gain (hFE) of 200 at 1mA and 5V, with a Vce saturation of 150mV maximum at 500µA and 10mA. An internal resistor of 10kΩ is also integrated.
This pre-biased transistor array is suitable for various switching and amplification applications where a simplified biasing network is desired. Its surface mount package facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PUMH4,115 has a voltage rating of 50V.
The PUMH4,115 can handle a maximum continuous collector current of 100mA.
The PUMH4,115 is available in a 6-TSSOP, SC-88, or SOT-363 package.
The PUMH4,115 is a surface mount device.
The minimum DC current gain (hFE) for the PUMH4,115 is 200 at 1mA and 5V.