| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
79,020 pcs
|
79020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PUMH10,115 is a dual NPN transistor with built-in bias resistors, designed for surface mounting in a 6-TSSOP, SC-88, or SOT-363 package. This device features a 50V collector-emitter voltage and a maximum output current of 100mA, with a power dissipation of 300mW.
Key electrical characteristics include a typical DC current gain (hFE) of 100 at 10mA and 5V, and a Vce saturation of 100mV at 250µA and 5mA. The integrated bias resistors have a typical value of 2.2 kΩ for R1 and a typical R2/R1 ratio of 21.
This resistor-equipped transistor is suitable for applications such as low current peripheral drivers and controlling IC inputs. Its integrated resistors simplify circuit design and reduce component count, making it a cost-effective solution for digital applications that typically use general-purpose transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PUMH10,115 is 50V.
The PUMH10,115 has a maximum output current (IO) of 100mA.
The PUMH10,115 is available in a 6-TSSOP, SC-88, or SOT-363 package.
The PUMH10,115 has a power dissipation rating of 300mW.
The typical DC current gain (hFE) for the PUMH10,115 is 100 at 10mA and 5V.