| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
67,044 pcs
|
67044 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
7,896 pcs
|
7896 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The PUMD9 from NXP Semiconductors is an NPN/PNP resistor-equipped transistor housed in an SC-88 (SOT363) plastic package. This component integrates two transistors with different polarities and built-in bias resistors, R1 typically 10 kΩ and R2 typically 47 kΩ. This design simplifies circuit design by reducing the number of external components and board space, making it especially suitable for space-constrained portable equipment.
Key electrical characteristics include a collector-base voltage of up to 50V and a continuous output current of 100mA per transistor. The device offers a DC current gain of at least 100. The built-in resistors eliminate mutual interference between transistors and allow for inverter circuit configurations without external resistors.
The PUMD9 operates within a wide temperature range from -65 °C to +150 °C. It is supplied in an SC-88 package, designed for surface mounting. The total power dissipation for the device is rated at 300mW at 25 °C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PUMD9 is packaged in an SC-88 surface-mount package.
-50 V
-50 V
100 mA
-65°C to +150°C
150°C