| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,435 pcs
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1435 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PUMT1 is a PNP general purpose double transistor housed in a compact SOT363-3 (SC-88) surface-mounted device (SMD) plastic package. This component is designed for independent operation, making it suitable for general-purpose switching and amplification applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -40 V and a maximum collector current (IC) of -100 mA per transistor. The device also offers a typical DC current gain (hFE) of 120 at specific test conditions (VCE = -6 V; IC = -1 mA; Tamb = 25 °C).
The PUMT1 is AEC-Q101 qualified, indicating its suitability for automotive applications. Its small package size helps reduce component count and board space in designs. The NPN complement to this device is the PUMX1.
This transistor is supplied in a TSSOP6 package, designed for surface mounting. It is rated for a junction temperature up to 150 °C and an ambient temperature range of -65 °C to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PUMT1 transistor is -40 V.
The maximum collector current (IC) for the PUMT1 transistor is -100 mA.
The typical DC current gain (hFE) of the PUMT1 transistor is 120 under the conditions VCE = -6 V; IC = -1 mA; Tamb = 25 °C.
The PUMT1 transistor is supplied in a SOT363-3 (SC-88) package, also referred to as TSSOP6.
Yes, the PUMT1 transistor is AEC-Q101 qualified.