PUMD9,115 The Nexperia PUMD9,115 is a dual NPN/PNP resistor-equipped transistor in a surface-mount SOT-363 package. It offers a 50V collector-emitter voltage and 100mA output current capability.
Mfr Part #:

PUMD9,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PUMD9,115 is a dual NPN/PNP resistor-equipped transistor in a surface-mount SOT-363 package. It offers a 50V collector-emitter voltage and 100mA output current capability.
✓ Total Stock: 235 pcs
$ Price Range: $0.99

PUMD9,115 Available from 1 distributor

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✓ Non-Authorised
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235 pcs
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PUMD9,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Power Dissipation
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PUMD9,115 Description

Short technical summary and product information.

The Nexperia PUMD9,115 is a dual NPN/PNP resistor-equipped transistor (RET) designed for surface-mount applications. This component integrates two transistors with built-in bias resistors, simplifying circuit design and reducing component count.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a maximum output current of 100mA per transistor. The integrated bias resistors have a typical value of 10 kΩ for R1 and a typical ratio of 4.7 for R2/R1, with specific values of R2 being 47 kΩ. The Vce saturation voltage is 100mV at 250µA collector current and 5mA base current, and the DC current gain (hFE) is a minimum of 100 at 5mA collector current and 5V Vce.

 

This device is housed in a compact 6-TSSOP, SC-88, or SOT-363 package, making it suitable for space-constrained designs. The surface-mount configuration facilitates automated assembly processes. The power dissipation is rated at 300mW.

 

The PUMD9,115 operates within a temperature range of -65°C to 150°C. Its design with integrated resistors makes it ideal for applications such as low current peripheral drivers and controlling IC inputs, replacing general-purpose transistors in digital applications.

PUMD9,115 Quick Information

Product Type: Resistor-Equipped Transistor
Canonical Name: NPN/PNP double Resistor-Equipped Transistor
Subcategory: Arrays

PUMD9,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PUMD9,115 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PUMD9,115 Features

  • Dual NPN/PNP resistor-equipped transistor.
  • Integrated 10kΩ and 47kΩ bias resistors.
  • 50V collector-emitter voltage rating.
  • 100mA maximum output current.
  • Surface mount SOT-363 package.

PUMD9,115 Applications

  • Ideal for low current peripheral drivers.
  • Used for controlling IC inputs.
  • Replaces general-purpose transistors.
  • Suitable for digital applications.

PUMD9,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the PUMD9,115?

The collector-emitter voltage (VCEO) for the PUMD9,115 is 50V.

What is the maximum output current of the PUMD9,115 transistor?

The PUMD9,115 has a maximum output current capability of 100mA.

What are the integrated bias resistor values in the PUMD9,115?

The PUMD9,115 has a typical input resistor (R1) of 10 kΩ and a typical resistor ratio (R2/R1) of 4.7, corresponding to R2 being 47 kΩ.

What package type is the PUMD9,115 available in?

The PUMD9,115 is available in a 6-TSSOP, SC-88, or SOT-363 package.

What is the operating temperature range for the PUMD9,115?

The operating temperature range for the PUMD9,115 is from -65°C to 150°C.

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