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27,000 pcs
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27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia USA Inc. PUMB3,115 is a pre-biased bipolar transistor designed for various electronic applications. This component features a dual PNP configuration, providing a collector-emitter breakdown voltage of up to 50V and a maximum collector current of 100mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 1mA and 5V, and a maximum Vce saturation of 100mV at 250µA and 5mA. It also incorporates a base resistor (R1) of 4.7kOhms and has a maximum power dissipation of 300mW.
This transistor is surface-mounted and comes in a compact 6-TSSOP package, also referred to as SC-88 or SOT-363. The series is qualified for automotive applications under the AEC-Q100 standard, indicating its suitability for demanding environments. The RoHS status is ROHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PUMB3,115 is a 2 PNP - Pre-Biased (Dual) transistor.
The maximum collector current (Ic) is 100mA.
The maximum collector-emitter breakdown voltage is 50V.
The base resistor (R1) has a value of 4.7kOhms.
The minimum DC Current Gain (hFE) is 200, tested at 1mA, 5V.
The maximum Vce Saturation is 100mV, tested at 250µA, 5mA.
The maximum power dissipation is 300mW.
The PUMB3,115 is available in 6-TSSOP, SC-88, SOT-363 packages.