| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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129,000 pcs
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129000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PUMB11,115 is a PNP/PNP Resistor-Equipped Transistor (RET) designed for simplified circuit designs and reduced component counts. It features built-in bias resistors with a typical value of 10 kΩ for R1.
This transistor offers a 100 mA output current capability and a collector-emitter voltage of -50 V. The device is housed in an ultra-small and flat SOT666 surface-mounted device (SMD) plastic package, making it suitable for space-constrained applications.
Key electrical characteristics include a maximum output current of 100 mA and a collector-emitter breakdown voltage of 50V. The typical DC current gain (hFE) is 30 at 5mA and 5V, with a Vce saturation of 150mV at 500µA and 10mA.
Applications for the PUMB11,115 include low current peripheral drivers and control of IC inputs. It serves as a replacement for general-purpose transistors in digital applications, simplifying design and reducing pick-and-place costs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PUMB11,115 is -50 V.
The PUMB11,115 has a maximum output current (IO) of 100 mA.
The PUMB11,115 features a typical R1 bias resistor value of 10 kΩ.
The PUMB11,115 is supplied in a SOT666 package.
The PUMB11,115 is a surface mount device.