| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,520 pcs
|
14520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PSMN8R5-60YS,115 is a standard level N-channel MOSFET housed in an LFPAK56 package, qualified to 175 °C. This MOSFET is designed for a wide range of industrial, communications, and domestic equipment applications.
Key electrical specifications include a drain-source voltage of 60V and a continuous drain current of 76A at 25°C. The on-state resistance (Rds On) is a maximum of 8 mΩ at 15A and 10V, contributing to high efficiency in switching power converters. The total gate charge (Qg) is 39 nC at 60A and 30V.
This MOSFET features advanced TrenchMOS technology for low Rds(on) and low gate charge, providing improved mechanical and thermal characteristics. The LFPAK package offers maximum power density in a Power SO8 footprint. Applications include DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.
The device operates within a junction temperature range of -55°C to 175°C and has a total power dissipation of 106W at 25°C. It is available in a surface mount configuration.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 60V.
The continuous drain current is 76A.
The maximum Rds On is 8 mOhm at 15A and 10V.
The operating temperature range is -55°C to 175°C.
The PSMN8R5-60YS,115 is supplied in a Surface Mount LFPAK56, Power-SO8 package.
The RoHS status is Compliant.