| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,050 pcs
|
9050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Operating Temperature | |
| Power Dissipation | |
| Tape & Reel |
The PSMN8R5-100PS from Nexperia is a high-performance N-channel MOSFET housed in a TO-220AB package. This device is engineered for demanding power applications, featuring a robust 100V drain-source voltage rating and a substantial 100A continuous drain current capability.
With a low on-resistance of 6.4 mOhm at a Vgs of 10V, the PSMN8R5-100PS minimizes conduction losses, contributing to improved system efficiency. The typical gate-source threshold voltage is 3V, facilitating easier drive requirements. Its wide operating temperature range of -55°C to +175°C ensures reliability in diverse environmental conditions.
The TO-220AB package is suitable for through-hole mounting, offering a familiar footprint for designers. This MOSFET is well-suited for various power switching and control applications where high current and voltage handling are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The package type is TO-220AB.
The drain-source voltage is 100V.
The continuous drain current is 100A.
The typical on-resistance is 6.4 milliohms at Vgs = 10V.
The gate-source threshold voltage is 3V.
It operates from -55°C to +175°C.