| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PSMN8R2-80YS is a standard level N-channel MOSFET designed for industrial, communications, and domestic equipment. It features Advanced TrenchMOS technology for low RdsOn and gate charge, contributing to high efficiency in switching power converters.
This MOSFET has a drain-source voltage rating of 80V and a continuous drain current of 82A at 25°C. The on-state resistance is a low 8.5mOhm at 15A and 10V gate-source voltage, with a maximum junction temperature of 175°C. The total power dissipation is rated at 130W.
Designed for high power density, the LFPAK package provides improved mechanical and thermal characteristics. Applications include DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.
The MOSFET operates within a temperature range of -55°C to 175°C and has a gate-source voltage tolerance of ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80 V.
The RdsOn is a maximum of 8.5 mΩ at 15A and 10V.
The maximum continuous drain current is 82 A at 25°C.
The maximum junction temperature is 175 °C.
It is supplied in the SC-100, SOT-669 package.