BSC028N06NS
Infineon
The Infineon BSC028N06NS is an N-channel MOSFET with a 60V drain-source voltage rating. It offers a low on-resistance of 2.8 mOhm and a continuous drain current of 137A.
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
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| SVHC Present |
The Nexperia PSMN7R6-100BSE is an N-channel MOSFET featuring a 100V drain-source voltage rating and a maximum on-state resistance of 7.6 mΩ at 25 °C. This device is part of Nexperia's "NextPower Live" portfolio, designed to complement hot-swap controllers with its ability to withstand substantial inrush currents.
With a typical RDS(on) of 6.5 mΩ at 25 °C and 10V VGS, the PSMN7R6-100BSE minimizes conduction losses, contributing to higher efficiency. It is qualified to 175 °C, making it suitable for demanding thermal environments.
Key features include enhanced forward biased safe operating area for superior linear mode operation and very low RDS(on) for reduced conduction losses. The MOSFET is housed in a D2PAK package, suitable for surface mounting.
Applications for the PSMN7R6-100BSE include electronic fuses, hot swap circuits, load switching, and soft start functionalities. It is particularly ideal for telecommunication systems based on a 48V backplane or supply rail.
| Qty | Low | High |
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| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The maximum continuous drain current is 75 A at a case temperature of 100 °C with a 10 V gate drive.
The typical drain-source on-state resistance is 6.5 mΩ at VGS = 10 V, ID = 25 A, and Tj = 25 °C.
It is available in a D2PAK surface-mount package.
The maximum operating junction temperature is 175 °C.
The maximum total power dissipation is 296 W at a case temperature of 25 °C.