| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,520 pcs
|
8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
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The Nexperia PSMN5R6-60YLX is a logic-level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. This device is designed and qualified for a wide array of power supply and motor control equipment.
Key electrical specifications include a drain-source voltage of 60V, a continuous drain current of 100A at 25°C, and a maximum power dissipation of 167W. The on-state resistance (RdsOn) is as low as 5.4 mOhm at 25A and 10V gate-source voltage, with a typical gate charge of 12 nC. The MOSFET operates with logic-level gate control and is avalanche rated, with 100% tested performance.
Applications for the PSMN5R6-60YLX include synchronous rectification in LLC topologies, chargers and adaptors with Vout less than 10V, fast charge and USB-PD applications, battery-powered motor control, and LED lighting. Its LFPAK package offers maximum power density within the Power SO8 footprint.
The device operates within a temperature range of -55°C to 175°C. It is surface-mounted and comes in LFPAK56 or Power-SO8 packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 60V.
The maximum continuous drain current is 100A.
The RdsOn resistance is typically 5.4 mOhm at 25A and 10V.
The operating temperature range is -55°C to 175°C.
The MOSFET is supplied in an LFPAK56, Power-SO8 package.