PSMN4R8-100YSEX The Nexperia PSMN4R8-100YSEX is an N-channel MOSFET designed for high-reliability applications. It features a 100V drain-source voltage and low RdsOn.
Mfr Part #:

PSMN4R8-100YSEX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PSMN4R8-100YSEX is an N-channel MOSFET designed for high-reliability applications. It features a 100V drain-source voltage and low RdsOn.
✓ Total Stock: 8,799 pcs
$ Price Range: $2.27

PSMN4R8-100YSEX Available from 1 distributor

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PSMN4R8-100YSEX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN4R8-100YSEX Description

Short technical summary and product information.

The Nexperia PSMN4R8-100YSEX is an N-channel enhancement mode MOSFET qualified to 175 °C, housed in a compact LFPAK56E package. This MOSFET is part of Nexperia's "ASFETs for hotswap" portfolio, delivering very low RDSon and strong linear-mode (SOA) performance.

 

Key electrical specifications include a drain-source voltage of 100V, a maximum continuous drain current of 120A, and a low on-state resistance of 4.8 mΩ at 25A and 10V. The device also features a total gate charge of 120 nC and a gate threshold voltage of 3.6V.

 

Designed for applications such as hot swap, load switch, soft start, and e-fuse, this MOSFET is robust enough to withstand substantial inrush currents. Its LFPAK56E package offers a 30 mm² footprint, making it suitable for applications demanding high performance and reliability in a small form factor. It is also well-suited for telecommunication systems based on a 48V backplane/supply rail.

 

The operating temperature range is -55°C to 175°C, with a maximum power dissipation of 294W. The MOSFET is surface-mounted and comes in a SOT-1023, 4-LFPAK package.

PSMN4R8-100YSEX Quick Information

Product Type: MOSFET
Canonical Name: Nexperia PSMN4R8-100YSEX N-channel MOSFET
Subcategory: N-Channel

PSMN4R8-100YSEX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN4R8-100YSEX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN4R8-100YSEX Features

  • 100V drain-source voltage rating.
  • Low 4.8mOhm RdsOn at 25A.
  • Enhanced Safe Operating Area.
  • Compact LFPAK56E package.
  • Qualified to 175°C operating temperature.

PSMN4R8-100YSEX Applications

  • Suitable for hot swap applications.
  • Ideal for load switch circuits.
  • Used in soft start functionalities.
  • Applicable for e-fuse designs.
  • Designed for 48V telecommunication systems.

PSMN4R8-100YSEX FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PSMN4R8-100YSEX MOSFET?

The maximum drain-source voltage is 100V.

What is the typical on-state resistance (Rds On) of the PSMN4R8-100YSEX?

The typical on-state resistance is 4.8mOhm at 25A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the PSMN4R8-100YSEX MOSFET supplied in?

It is supplied in the LFPAK56E, Power-SO8 package.

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