| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,799 pcs
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8799 pcs | On Request | 1 | On Request | On Request | 26+ | On Request | On Request |
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The Nexperia PSMN4R8-100YSEX is an N-channel enhancement mode MOSFET qualified to 175 °C, housed in a compact LFPAK56E package. This MOSFET is part of Nexperia's "ASFETs for hotswap" portfolio, delivering very low RDSon and strong linear-mode (SOA) performance.
Key electrical specifications include a drain-source voltage of 100V, a maximum continuous drain current of 120A, and a low on-state resistance of 4.8 mΩ at 25A and 10V. The device also features a total gate charge of 120 nC and a gate threshold voltage of 3.6V.
Designed for applications such as hot swap, load switch, soft start, and e-fuse, this MOSFET is robust enough to withstand substantial inrush currents. Its LFPAK56E package offers a 30 mm² footprint, making it suitable for applications demanding high performance and reliability in a small form factor. It is also well-suited for telecommunication systems based on a 48V backplane/supply rail.
The operating temperature range is -55°C to 175°C, with a maximum power dissipation of 294W. The MOSFET is surface-mounted and comes in a SOT-1023, 4-LFPAK package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The typical on-state resistance is 4.8mOhm at 25A and 10V.
The operating temperature range is -55°C to 175°C.
It is supplied in the LFPAK56E, Power-SO8 package.