PSMN4R8-100BSEJ The Nexperia PSMN4R8-100BSEJ is an N-channel MOSFET with a 100V drain-source voltage and a low 4.8mOhm Rds(on). It is supplied in a D2PAK package.
Mfr Part #:

PSMN4R8-100BSEJ

Available from 3 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PSMN4R8-100BSEJ is an N-channel MOSFET with a 100V drain-source voltage and a low 4.8mOhm Rds(on). It is supplied in a D2PAK package.
✓ Total Stock: 7,901 pcs
$ Price Range: $2.27

PSMN4R8-100BSEJ Available from 3 distributors

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✓ Non-Authorised
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4,220 pcs
4220 pcs On Request 1 On Request On Request On Request On Request On Request
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3,667 pcs
3667 pcs On Request 1 On Request On Request On Request On Request On Request
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14 pcs
14 pcs On Request 1 On Request On Request On Request On Request On Request

PSMN4R8-100BSEJ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN4R8-100BSEJ Description

Short technical summary and product information.

The Nexperia PSMN4R8-100BSEJ is a standard level N-channel MOSFET designed for high-efficiency applications. It features a drain-source voltage of 100V and a very low on-state resistance of 4.8mOhm at 25A and 10V gate-source voltage, minimizing conduction losses.

 

This MOSFET is qualified to 175°C and offers an enhanced forward biased safe operating area for superior linear mode operation. It is part of Nexperia's "NextPower Live" portfolio, complementing hot-swap controllers with its robustness against inrush currents and low RDS(on) for efficiency.

 

The device is housed in a D2PAK (TO-263-3) surface-mount package, suitable for various power management tasks. Its key applications include electronic fuses, hot swap, load switching, and soft start functionalities, particularly in telecommunication systems based on a 48V backplane.

 

Key electrical characteristics include a peak drain current of 707A pulsed, a total power dissipation of 405W, and a gate charge of 278nC. The operating temperature range is -55°C to 175°C.

PSMN4R8-100BSEJ Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 100V 4.8mOhm Standard Level MOSFET
Subcategory: N-Channel

PSMN4R8-100BSEJ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN4R8-100BSEJ Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN4R8-100BSEJ Features

  • 100V drain-source voltage rating.
  • Low 4.8mOhm on-state resistance.
  • High 120A continuous current.
  • D2PAK surface-mount package.
  • Qualified for 175°C operation.

PSMN4R8-100BSEJ Applications

  • Ideal for electronic fuse circuits.
  • Suitable for hot swap applications.
  • Used in load switch designs.
  • Supports soft start functionality.

PSMN4R8-100BSEJ FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the PSMN4R8-100BSEJ?

The drain-source voltage is 100V.

What is the typical on-state resistance of the PSMN4R8-100BSEJ?

The typical on-state resistance is 4.1 mOhm at 25A and 10V.

What is the maximum operating temperature for this MOSFET?

The maximum operating temperature is 175°C.

What package type is the PSMN4R8-100BSEJ supplied in?

It is supplied in a D2PAK (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB) surface-mount package.

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