PSMN4R1-60YLX The Nexperia PSMN4R1-60YLX is a logic level N-channel MOSFET designed for power supply and motor control applications. It features a 60V drain-source voltage and a low on-state resistance.
Mfr Part #:

PSMN4R1-60YLX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PSMN4R1-60YLX is a logic level N-channel MOSFET designed for power supply and motor control applications. It features a 60V drain-source voltage and a low on-state resistance.
✓ Total Stock: 1,490 pcs
$ Price Range: $2.27

PSMN4R1-60YLX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,490 pcs
1490 pcs On Request 1 On Request On Request On Request On Request On Request

PSMN4R1-60YLX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN4R1-60YLX Description

Short technical summary and product information.

The Nexperia PSMN4R1-60YLX is a high-performance N-channel MOSFET utilizing TrenchMOS technology. It is designed for logic-level gate operation and is suitable for a wide range of power supply and motor control equipment.

 

Key electrical specifications include a drain-source voltage of 60V, a continuous drain current of 100A, and a low drain-source on-state resistance of 4.1mΩ at 25A and 10V. The device also features a gate charge of 103nC and an input capacitance of 7853pF.

 

This MOSFET is housed in an LFPAK56 (Power SO8) package, offering maximum power density. It operates within a temperature range of -55°C to 175°C. Applications include synchronous rectification, chargers, adaptors, fast charge and USB-PD, battery-powered motor control, and LED lighting.

 

Features like advanced TrenchMOS technology provide low RDSon and low gate charge. The device is avalanche rated and 100% tested, ensuring reliability in demanding applications.

PSMN4R1-60YLX Quick Information

Product Type: MOSFET
Canonical Name: N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56
Subcategory: N-Channel

PSMN4R1-60YLX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN4R1-60YLX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN4R1-60YLX Features

  • Logic level N-channel MOSFET.
  • 60V drain-source voltage rating.
  • Low 4.1mOhm Rds On resistance.
  • 100A continuous current capability.
  • LFPAK56 power density package.

PSMN4R1-60YLX Applications

  • Synchronous rectifier in LLC topology.
  • Chargers and adaptors with Vout < 10V.
  • Fast charge and USB-PD applications.
  • Battery powered motor control.
  • LED lighting and TV backlight.

PSMN4R1-60YLX FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PSMN4R1-60YLX MOSFET?

The drain-source voltage (Vdss) is 60V.

What is the maximum continuous drain current for the PSMN4R1-60YLX?

The maximum continuous drain current is 100A.

What is the on-state resistance (Rds On) of the PSMN4R1-60YLX?

The Rds On is a maximum of 4.1mOhm at 25A drain current and 10V gate-source voltage.

What is the operating temperature range for the PSMN4R1-60YLX?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the PSMN4R1-60YLX MOSFET supplied in?

The PSMN4R1-60YLX is supplied in an LFPAK56, Power-SO8 package.

What is the gate charge (Qg) for the PSMN4R1-60YLX?

The gate charge (Qg) is a maximum of 103nC at 10V gate-source voltage.

What is the input capacitance (Ciss) of the PSMN4R1-60YLX?

The input capacitance (Ciss) is a maximum of 7853pF at 25V drain-source voltage.

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