| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,490 pcs
|
1490 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PSMN4R1-60YLX is a high-performance N-channel MOSFET utilizing TrenchMOS technology. It is designed for logic-level gate operation and is suitable for a wide range of power supply and motor control equipment.
Key electrical specifications include a drain-source voltage of 60V, a continuous drain current of 100A, and a low drain-source on-state resistance of 4.1mΩ at 25A and 10V. The device also features a gate charge of 103nC and an input capacitance of 7853pF.
This MOSFET is housed in an LFPAK56 (Power SO8) package, offering maximum power density. It operates within a temperature range of -55°C to 175°C. Applications include synchronous rectification, chargers, adaptors, fast charge and USB-PD, battery-powered motor control, and LED lighting.
Features like advanced TrenchMOS technology provide low RDSon and low gate charge. The device is avalanche rated and 100% tested, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60V.
The maximum continuous drain current is 100A.
The Rds On is a maximum of 4.1mOhm at 25A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C (TJ).
The PSMN4R1-60YLX is supplied in an LFPAK56, Power-SO8 package.
The gate charge (Qg) is a maximum of 103nC at 10V gate-source voltage.
The input capacitance (Ciss) is a maximum of 7853pF at 25V drain-source voltage.