| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,520 pcs
|
29520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PSMN4R0-30YL,115 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This MOSFET is designed and qualified for industrial and communications applications, offering high efficiency due to low switching and conduction losses. It is suitable for logic level gate drive sources.
Key electrical specifications include a drain-source voltage of 30V and a continuous drain current of 100A at 25°C case temperature. The drain-source on-state resistance (Rds On) is a maximum of 4mOhm at 15A and 10V gate-source voltage. The device operates within a junction temperature range of -55°C to 175°C and has a total power dissipation of 69W at 25°C case temperature.
This MOSFET comes in a LFPAK56 or Power-SO8 package, suitable for surface mounting. The operating temperature range is -55°C to 175°C. Applications include Class-D amplifiers, DC-to-DC converters, motor control, and server power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 100A.
The Rds On is a maximum of 4mOhm at 15A and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
The MOSFET is available in LFPAK56 and Power-SO8 packages.