PSMN3R8-100BS,118 The Nexperia PSMN3R8-100BS is an N-channel MOSFET designed for industrial applications. It offers a 100V drain-source voltage and a low on-resistance of 3.9mOhm.
Mfr Part #:

PSMN3R8-100BS,118

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PSMN3R8-100BS is an N-channel MOSFET designed for industrial applications. It offers a 100V drain-source voltage and a low on-resistance of 3.9mOhm.
✓ Total Stock: 5,820 pcs
$ Price Range: $2.27

PSMN3R8-100BS,118 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,820 pcs
5820 pcs On Request 1 On Request On Request On Request On Request On Request

PSMN3R8-100BS,118 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN3R8-100BS,118 Description

Short technical summary and product information.

This Nexperia PSMN3R8-100BS is a standard level N-channel MOSFET qualified to 175°C, housed in a D2PAK package. It is designed for a wide range of industrial, communications, and domestic equipment.

 

Key electrical specifications include a maximum drain-source voltage of 100V and a continuous drain current of 120A at 25°C case temperature. The device exhibits a low on-state resistance (RdsOn) of 3.9mOhm at 25A and 10V gate-source voltage, contributing to high efficiency due to low switching and conduction losses. It is suitable for standard level gate drive sources.

 

With a maximum power dissipation of 306W (Tc), the MOSFET operates across a temperature range of -55°C to 175°C (TJ). The D2PAK (TO-263-3) surface-mount package is suitable for various assembly processes.

 

Applications for this MOSFET include DC-to-DC converters, load switching, motor control, and server power supplies. Its robust design and high-temperature qualification make it a reliable choice for demanding industrial environments.

PSMN3R8-100BS,118 Quick Information

Product Type: MOSFET
Canonical Name: Nexperia PSMN3R8-100BS N-Channel 100V 3.9mOhm MOSFET
Subcategory: N-Channel

PSMN3R8-100BS,118 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN3R8-100BS,118 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN3R8-100BS,118 Features

  • N-channel MOSFET qualified to 175°C.
  • 100V drain-source voltage rating.
  • Low RdsOn of 3.9mOhm at 25A, 10V.
  • 120A continuous drain current.
  • D2PAK surface-mount package.

PSMN3R8-100BS,118 Applications

  • Suitable for DC-to-DC converters.
  • Used in load switching applications.
  • Ideal for motor control circuits.
  • Designed for server power supplies.

PSMN3R8-100BS,118 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PSMN3R8-100BS MOSFET?

The maximum drain-source voltage (Vds) is 100V.

What is the continuous drain current rating of the PSMN3R8-100BS?

The continuous drain current is rated at 120A at a case temperature of 25°C.

What is the typical on-resistance (RdsOn) for the PSMN3R8-100BS?

The typical on-resistance is 3.9mOhm at a drain current of 25A and gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the PSMN3R8-100BS MOSFET supplied in?

It is supplied in a D2PAK (TO-263-3) surface-mount package.

Home
Account

Categories