| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,820 pcs
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5820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Nexperia PSMN3R8-100BS is a standard level N-channel MOSFET qualified to 175°C, housed in a D2PAK package. It is designed for a wide range of industrial, communications, and domestic equipment.
Key electrical specifications include a maximum drain-source voltage of 100V and a continuous drain current of 120A at 25°C case temperature. The device exhibits a low on-state resistance (RdsOn) of 3.9mOhm at 25A and 10V gate-source voltage, contributing to high efficiency due to low switching and conduction losses. It is suitable for standard level gate drive sources.
With a maximum power dissipation of 306W (Tc), the MOSFET operates across a temperature range of -55°C to 175°C (TJ). The D2PAK (TO-263-3) surface-mount package is suitable for various assembly processes.
Applications for this MOSFET include DC-to-DC converters, load switching, motor control, and server power supplies. Its robust design and high-temperature qualification make it a reliable choice for demanding industrial environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 100V.
The continuous drain current is rated at 120A at a case temperature of 25°C.
The typical on-resistance is 3.9mOhm at a drain current of 25A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
It is supplied in a D2PAK (TO-263-3) surface-mount package.