| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,620 pcs
|
2620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The PSMN3R7-100BSEJ is a N-channel power MOSFET manufactured by Nexperia USA Inc. It features a drain-source voltage (Vdss) of 100V and a maximum drain current (Id) of 120A at 25°C. The device is packaged in a D2PAK form factor, suitable for surface mounting on circuit boards. Its high current capacity makes it suitable for power switching, motor control, and other high-current applications. The MOSFET has a maximum gate-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 4V at 1mA. It can handle a pulsed drain current (Idm) of up to 780A at 25°C. The total power dissipation (Ptot) is rated at 405W at 25°C, ensuring reliable operation under high power conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The maximum drain current (Id) is 120A at 25°C.
It is packaged in a D2PAK surface-mount package.
The gate threshold voltage (Vgs(th)) is 4V at 1mA.
The pulsed drain current (Idm) is 780A at 25°C.
The total power dissipation (Ptot) is rated at 405W at 25°C.