| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,020 pcs
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13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Nexperia PSMN3R3-40YS,115 is a standard level N-channel MOSFET designed for industrial, communications, and domestic equipment. It operates with a drain-source voltage of up to 40V and can handle a continuous drain current of 100A at 25°C.
The MOSFET offers a low on-state resistance (Rds On) of 3.3mOhm at 25A and 10V gate-source voltage, with a maximum junction temperature of 175°C. It is qualified to 175°C and features Advanced TrenchMOS technology for low Rds On and gate charge.
Key electrical characteristics include a gate threshold voltage of 4V at 1mA and a gate charge of 49nC. The device has an input capacitance of 2754pF at 20V.
Packaged in an LFPAK56 (Power-SO8) surface-mount package, this MOSFET is suitable for applications such as DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The continuous drain current is 100A at 25°C.
The Rds On is a maximum of 3.3mOhm at 25A and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
The MOSFET is in an LFPAK56, Power-SO8 package.
The total gate charge is 49nC at 10V gate-source voltage.