PSMN2R0-30YLDX The Nexperia PSMN2R0-30YLDX is a logic level N-channel MOSFET designed for high efficiency applications. It features a 30V drain-source voltage and low on-state resistance.
Mfr Part #:

PSMN2R0-30YLDX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PSMN2R0-30YLDX is a logic level N-channel MOSFET designed for high efficiency applications. It features a 30V drain-source voltage and low on-state resistance.
✓ Total Stock: 5,520 pcs
$ Price Range: $2.27

PSMN2R0-30YLDX Available from 1 distributor

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✓ Non-Authorised
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PSMN2R0-30YLDX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN2R0-30YLDX Description

Short technical summary and product information.

The PSMN2R0-30YLDX from Nexperia is a logic level N-channel enhancement mode MOSFET utilizing NextPowerS3 technology. This MOSFET is optimized for 4.5V gate drive and offers high efficiency with low spiking performance.

 

Key electrical specifications include a drain-source voltage of 30V, a maximum continuous drain current of 100A (Tc), and a maximum power dissipation of 142W (Tc). The on-state resistance (Rds On) is as low as 1.61 mΩ (typical) at 25A and 10V Vgs, and 2.1 mΩ (typical) at 25A and 4.5V Vgs. Dynamic characteristics include a total gate charge (QG) of 21.8 nC (typical) at 4.5V Vgs.

 

This device is housed in a LFPAK56, Power-SO8 surface mount package, offering low parasitic inductance and resistance. It is suitable for applications such as on-board DC-to-DC solutions, secondary-side synchronous rectification, voltage regulator modules (VRM), and power delivery for various system components.

 

The operating temperature range is -55°C to 175°C (Tj). The MOSFET is wave solderable with exposed leads for optimal visual solder inspection.

PSMN2R0-30YLDX Quick Information

Product Type: MOSFET
Canonical Name: N-Channel Logic Level MOSFET
Subcategory: Single

PSMN2R0-30YLDX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN2R0-30YLDX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN2R0-30YLDX Features

  • 30V drain-source voltage rating.
  • Low 2mOhm Rds On resistance.
  • 100A continuous drain current.
  • LFPAK56 surface mount package.
  • Optimized for 4.5V gate drive.

PSMN2R0-30YLDX Applications

  • Used in on-board DC-to-DC solutions.
  • Suitable for synchronous rectification.
  • Ideal for voltage regulator modules.
  • Powers V-core, ASIC, and DDR components.
  • Applicable to motor control circuits.

PSMN2R0-30YLDX FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the PSMN2R0-30YLDX?

The drain-source voltage is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 100 A (Tc).

What is the Rds On for this MOSFET?

The Rds On is a maximum of 2 mΩ at 25A and 10V Vgs, and a maximum of 2.5 mΩ at 25A and 4.5V Vgs.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the PSMN2R0-30YLDX in?

It is available in LFPAK56 and SC-100, SOT-669 packages.

What is the gate charge (Qg)?

The total gate charge (QG) is 21.8 nC (typical) at 4.5V Vgs, and the gate-drain charge (QGD) is 6.3 nC (typical).

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