| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Nexperia PSMN2R0-25YLDX is an N-channel enhancement mode MOSFET utilizing NextPowerS3 Technology. It is optimized for logic level gate drive and offers a drain-source voltage of 25V and a maximum continuous drain current of 179A at 25°C.
The MOSFET boasts a low on-state resistance of 2.09 mΩ at 25A and 10V Vgs, along with a total gate charge of 34.1 nC at 10V Vgs. Its "SchottkyPlus" technology provides Schottky-like performance with low leakage current, making it suitable for high-efficiency applications at high switching frequencies.
Packaged in an LFPAK56 (Power-SO8) surface mount package, it operates within a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 115W at 25°C. The exposed leads facilitate optimal visual solder inspection.
Applications include on-board DC:DC solutions for server and telecommunications, secondary-side synchronous rectification, voltage regulator modules (VRM), and point-of-load (POL) modules.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25 V.
The maximum continuous drain current is 179 A.
The Rds On is 2.09 mΩ at 25A and 10V Vgs.
The operating temperature range is -55°C to 175°C.
It is in an LFPAK56, Power-SO8 package.