| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,515 pcs
|
1515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature |
The Nexperia PSMN2R0-100SSF is a high-performance N-channel MOSFET designed for demanding applications. It offers a maximum drain-source voltage of 100V and a substantial continuous drain current of 259A at 25°C.
This MOSFET boasts a low on-state resistance, with a maximum of 2.07 mΩ at Tj = 25°C and 10 VGS. It also features a high total power dissipation capability of 284W at 25°C, making it suitable for power-intensive designs.
The PSMN2R0-100SSF is housed in a compact LFPAK88 surface-mount package, measuring 8mm x 8mm x 1.6mm with a 2mm lead pitch. This package type facilitates efficient heat dissipation and integration into compact electronic systems.
Key electrical characteristics include a gate-drain charge of 32 nC and a total gate charge of 162 nC, enabling efficient switching performance. The device also exhibits avalanche ruggedness with a non-repetitive drain-source avalanche energy of 732 mJ.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The continuous drain current is 259 A at 25°C with VGS = 10 V.
The maximum total power dissipation is 284 W at Tmb = 25°C.
The junction temperature range is -55°C to 150°C.
The maximum on-state resistance is 2.07 mΩ at Tj = 25°C with VGS = 10 V and ID = 25 A.
The PSMN2R0-100SSF is supplied in the LFPAK88 package.