| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,520 pcs
|
5520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PSMN1R8-40YLC,115 is a logic level enhancement mode N-channel MOSFET designed for industrial, communications, and domestic equipment. It utilizes NextPower Superjunction technology, optimized for 4.5V gate drive.
Key electrical specifications include a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 100A at 25°C. The on-state resistance (RdsOn) is as low as 1.8mΩ at 25A and 10V Vgs, and 1.8mΩ at 25A and 4.5V Vgs. It offers ultra-low QG, QGD, and QOSS for high system efficiencies.
This MOSFET is qualified to 175°C and operates within a temperature range of -55°C to 175°C. It is packaged in a high reliability Power SO8 (LFPAK56) surface-mount package, suitable for demanding applications.
Applications include DC-to-DC converters, load switching, power OR-ing, server power supplies, and synchronous rectification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The continuous drain current is 100A at 25°C.
The RdsOn is a maximum of 1.8mΩ at 25A and 4.5V gate drive.
The operating temperature range is -55°C to 175°C.
It is supplied in the LFPAK56, Power-SO8 package.
The total gate charge is 45nC at 4.5V Vgs, 25A Id, and 20V Vds.