| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PSMN1R7-30YL,115 is a logic-level N-channel MOSFET designed for industrial, communications, and domestic equipment. It is qualified to 175 °C and utilizes Advanced TrenchMOS technology for low RdsOn and gate charge, contributing to high efficiency in switching power converters.
Key electrical specifications include a drain-source voltage of 30V, a continuous drain current of 100A, and a low on-state resistance of 1.7mOhm at 15A and 10V Vgs. The junction temperature range is -55°C to 175°C, with a maximum power dissipation of 109W.
This MOSFET is housed in an LFPAK56 (Power-SO8) package, offering maximum power density. It is suitable for applications such as DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The RdsOn (Max) is 1.7 mΩ at 15A and 10V.
The continuous drain current is 100 A.
The operating junction temperature range is -55°C to 175°C.
The MOSFET is supplied in an LFPAK56 or Power-SO8 package.