| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The Nexperia PSMN1R5-30YLC is an N-channel, logic level enhancement mode MOSFET utilizing NextPower technology. It is housed in a high-reliability LFPAK56 (Power-SO8) package, qualified to 175°C.
This MOSFET is optimized for 4.5V gate drive and offers ultra-low RDS(on) and low parasitic inductance, contributing to high system efficiencies. Key electrical characteristics include a maximum drain-source voltage of 30V and a typical RDS(on) of 1.3mΩ at VGS = 10V and 25A.
Applications for the PSMN1R5-30YLC include DC-to-DC converters, lithium-ion battery protection, load switching, power OR-ing, server power supplies, and synchronous rectification. Its design and qualification for a wide range of industrial, communications, and domestic equipment make it a versatile component for power management solutions.
The maximum drain-source voltage is 30 V.
The typical on-state resistance is 1.65 mΩ.
The typical on-state resistance is 1.3 mΩ.
The maximum junction temperature is 175 °C.
The package type is LFPAK56; Power-SO8.