PSMN1R3-30YL,115 The Nexperia USA Inc. PSMN1R3-30YL,115 is an N-channel MOSFET designed for industrial, communications, and domestic equipment. It offers a 30V drain-source voltage and 100A continuous drain current.
Mfr Part #:

PSMN1R3-30YL,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PSMN1R3-30YL,115 is an N-channel MOSFET designed for industrial, communications, and domestic equipment. It offers a 30V drain-source voltage and 100A continuous drain current.
✓ Total Stock: 2,520 pcs
$ Price Range: $2.27

PSMN1R3-30YL,115 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,520 pcs
2520 pcs On Request 1 On Request On Request On Request On Request On Request

PSMN1R3-30YL,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN1R3-30YL,115 Description

Short technical summary and product information.

The PSMN1R3-30YL,115 from Nexperia USA Inc. is a logic-level N-channel MOSFET qualified to 150 °C, suitable for a wide range of industrial, communications, and domestic applications. It features Advanced TrenchMOS technology for low RDS(on) and low gate charge, contributing to high efficiency in switching power converters.

 

Key electrical specifications include a drain-source voltage of 30V and a continuous drain current of 100A at 25°C (Tc). The on-state resistance is as low as 1.3 mOhm at 15A and 10V gate-source voltage. The device can handle a maximum power dissipation of 121W (Tc) and operates within a junction temperature range of -55°C to 150°C.

 

This MOSFET is housed in an LFPAK56, Power-SO8 package, also referred to as SOT-1023, 4-LFPAK. It is designed for surface mounting, offering improved mechanical and thermal characteristics for maximum power density. Applications include DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.

PSMN1R3-30YL,115 Quick Information

Product Type: MOSFET
Canonical Name: N-channel Logic Level MOSFET
Subcategory: N-Channel

PSMN1R3-30YL,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN1R3-30YL,115 Estimated Pricing

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1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN1R3-30YL,115 Features

  • N-channel logic level MOSFET.
  • 30V drain-source voltage rating.
  • 100A continuous drain current.
  • Low 1.3 mOhm on-state resistance.
  • LFPAK56 surface mount package.

PSMN1R3-30YL,115 Applications

  • Suitable for DC-to-DC converters.
  • Used in lithium-ion battery protection.
  • Ideal for load switching applications.
  • Applicable to motor control circuits.
  • Designed for server power supplies.

PSMN1R3-30YL,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PSMN1R3-30YL,115?

The maximum drain-source voltage is 30 V.

What is the continuous drain current of the PSMN1R3-30YL,115?

The continuous drain current is 100 A.

What is the maximum on-state resistance (Rds On) for this MOSFET?

The maximum Rds On is 1.3 mOhm at 15A drain current and 10V gate-source voltage.

What is the operating temperature range for the PSMN1R3-30YL,115?

The operating temperature range is -55°C to 150°C.

What package type is the PSMN1R3-30YL,115 MOSFET supplied in?

It is supplied in an LFPAK56, Power-SO8 package, also known as SOT-1023, 4-LFPAK.

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