PSMN1R2-30YLDX The Nexperia PSMN1R2-30YLDX is a 30V N-channel logic level MOSFET. It offers a low 1.2 mΩ RdsOn and high current capability in an LFPAK56 package.
Mfr Part #:

PSMN1R2-30YLDX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PSMN1R2-30YLDX is a 30V N-channel logic level MOSFET. It offers a low 1.2 mΩ RdsOn and high current capability in an LFPAK56 package.
✓ Total Stock: 1,433 pcs
$ Price Range: $2.27

PSMN1R2-30YLDX Available from 1 distributor

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✓ Non-Authorised
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PSMN1R2-30YLDX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN1R2-30YLDX Description

Short technical summary and product information.

The Nexperia PSMN1R2-30YLDX is a high-performance N-channel logic level MOSFET designed for demanding applications. It features a drain-source voltage of 30V and can handle up to 250A of drain current under specific conditions, with a continuous current rating of 100A at 25°C case temperature.

 

This MOSFET utilizes NextPowerS3 technology, providing ultra-low gate charge (QG) and drain-source on-state resistance (RdsOn) for high system efficiency, especially at higher switching frequencies. The RdsOn is as low as 1.2 mΩ at 25A drain current and 4.5V gate drive, and 0.96 mΩ at 25A drain current and 10V gate drive. It is optimized for 4.5V gate drive and offers superfast switching with soft-recovery characteristics.

 

The device is housed in an LFPAK56 (Power-SO8) package, suitable for surface mounting. This package offers low parasitic inductance and resistance, and its exposed leads allow for optimal visual solder inspection. The operating temperature range is -55°C to 175°C (TJ), with a maximum power dissipation of 194W at 25°C case temperature.

 

Applications include on-board DC-to-DC solutions for server and telecommunications, secondary-side synchronous rectification, voltage regulator modules (VRM), point-of-load (POL) modules, and power delivery for various system components. It is also suitable for brushed and brushless motor control and power OR-ing.

PSMN1R2-30YLDX Quick Information

Product Type: MOSFET
Canonical Name: Nexperia PSMN1R2-30YLDX N-Channel Logic Level MOSFET
Subcategory: Logic Level

PSMN1R2-30YLDX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN1R2-30YLDX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN1R2-30YLDX Features

  • 30V drain-source voltage rating.
  • 250A pulsed drain current capability.
  • Ultra low 1.2mΩ RdsOn at 4.5V Vgs.
  • Optimized for 4.5V gate drive.
  • LFPAK56 surface mount package.

PSMN1R2-30YLDX Applications

  • Used in DC-to-DC converters.
  • Suitable for synchronous rectification.
  • Applied in voltage regulator modules.
  • Powers server and telecom components.
  • Enables motor control applications.

PSMN1R2-30YLDX FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PSMN1R2-30YLDX MOSFET?

The drain-source voltage is 30 V.

What is the maximum continuous drain current for the PSMN1R2-30YLDX?

The maximum continuous drain current is 100A at 25°C case temperature.

What is the RdsOn (Max) for the PSMN1R2-30YLDX at 4.5V gate drive?

The RdsOn (Max) is 1.6 mΩ at 25A drain current and 4.5V gate drive.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the PSMN1R2-30YLDX MOSFET supplied in?

The MOSFET is supplied in an LFPAK56, Power-SO8 package.

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