| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,129 pcs
|
3129 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
595 pcs
|
595 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Nexperia PSMN1R2-25YL,115 is a logic level N-channel MOSFET designed for industrial, communications, and domestic equipment. It offers a drain-source voltage of 25V and a low on-state resistance of 1.2 mΩ at 15A and 25°C.
Key electrical characteristics include a maximum continuous drain current of 100A (Tc) and a total power dissipation of 121W (Tc). The MOSFET utilizes Advanced TrenchMOS technology for low RDS(on) and gate charge, contributing to high efficiency in switching power converters. It operates across a wide temperature range from -55°C to 150°C.
The component is packaged in a SOT-1023, 4-LFPAK (LFPAK56; Power-SO8) with surface mount technology. Its design provides improved mechanical and thermal characteristics, offering maximum power density in a Power SO8 package. Applications include DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the PSMN1R2-25YL,115 is 25V.
The PSMN1R2-25YL,115 has a maximum continuous drain current of 100A when measured at the case temperature.
The typical on-state resistance (RdsOn) is 0.9 mOhm at 15A and 25°C, with a maximum of 1.2 mOhm at 15A and 25°C, and a maximum of 1.6 mOhm at 15A and 100°C.
The operating junction temperature range for this MOSFET is -55°C to 150°C.
The PSMN1R2-25YL,115 is supplied in a SOT-1023, 4-LFPAK package, also referred to as LFPAK56 or Power-SO8.