PSMN1R0-30YLDX The Nexperia PSMN1R0-30YLDX is an N-channel logic level MOSFET designed for high-efficiency applications. It offers a 30V drain-source voltage and a 300A capability.
Mfr Part #:

PSMN1R0-30YLDX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PSMN1R0-30YLDX is an N-channel logic level MOSFET designed for high-efficiency applications. It offers a 30V drain-source voltage and a 300A capability.
✓ Total Stock: 295 pcs
$ Price Range: $2.27

PSMN1R0-30YLDX Available from 1 distributor

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PSMN1R0-30YLDX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN1R0-30YLDX Description

Short technical summary and product information.

The Nexperia PSMN1R0-30YLDX is a high-performance N-channel enhancement mode MOSFET featuring NextPowerS3 Technology. It is designed for logic-level gate drive applications and offers a 30V drain-source voltage.

 

Key electrical characteristics include a low on-state resistance of 1.0 mΩ at 25A and 4.5V Vgs, and a maximum drain current of 300A. The device boasts ultra-low QG, QGD, and QOSS for high system efficiency, particularly at higher switching frequencies. It also features superfast switching with a soft-recovery characteristic (s-factor > 1) and low spiking for reduced EMI.

 

Packaged in an LFPAK56 (Power-SO8) surface-mount package, the PSMN1R0-30YLDX is suitable for demanding applications. Its operating temperature range is -55°C to 175°C, with a total power dissipation of 238W at 25°C.

 

Applications include on-board DC-to-DC solutions for servers and telecommunications, secondary-side synchronous rectification, voltage regulator modules (VRMs), point-of-load modules, and power delivery for various system components. It is also suitable for brushed and brushless motor control and power OR-ing.

PSMN1R0-30YLDX Quick Information

Product Type: MOSFET
Series: NextPowerS3
Canonical Name: Nexperia PSMN1R0-30YLDX N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET
Subcategory: N-Channel

PSMN1R0-30YLDX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN1R0-30YLDX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN1R0-30YLDX Features

  • 30V drain-source voltage capability.
  • 300A continuous drain current.
  • 1.0 mΩ RdsOn at 4.5V gate drive.
  • LFPAK56 surface-mount package.
  • Optimized for 4.5V gate drive.

PSMN1R0-30YLDX Applications

  • On-board DC-to-DC solutions.
  • Secondary-side synchronous rectification.
  • Voltage regulator modules (VRMs).
  • Power delivery for system components.
  • Brushed and brushless motor control.

PSMN1R0-30YLDX FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PSMN1R0-30YLDX MOSFET?

The drain-source voltage (Vds) is 30 V.

What is the maximum continuous drain current for the PSMN1R0-30YLDX?

The maximum continuous drain current is 300 A.

What is the typical on-state resistance (RdsOn) of the PSMN1R0-30YLDX at 25°C?

The typical RdsOn is 1 mΩ at 25A and 4.5V Vgs.

What is the operating temperature range for the PSMN1R0-30YLDX?

The operating temperature range is -55°C to 175°C.

What package type is the PSMN1R0-30YLDX MOSFET supplied in?

It is supplied in the LFPAK56 and Power-SO8 package.

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