PSMN102-200Y,115 The Nexperia PSMN102-200Y,115 is an N-channel MOSFET designed for high-frequency applications. It offers a 200V drain-source voltage and 21.5A continuous drain current.
Mfr Part #:

PSMN102-200Y,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PSMN102-200Y,115 is an N-channel MOSFET designed for high-frequency applications. It offers a 200V drain-source voltage and 21.5A continuous drain current.
✓ Total Stock: 11,520 pcs
$ Price Range: $2.27

PSMN102-200Y,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,520 pcs
11520 pcs On Request 1 On Request On Request On Request On Request On Request

PSMN102-200Y,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PSMN102-200Y,115 Description

Short technical summary and product information.

The Nexperia PSMN102-200Y,115 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed and qualified for use in computing, communications, consumer, and industrial applications.

 

Key electrical specifications include a maximum drain-source voltage of 200V and a continuous drain current of 21.5A at 25°C. The drain-source on-state resistance is a maximum of 102mOhm at 12A and 10V gate-source voltage. Fast switching characteristics make it suitable for high-frequency applications.

 

This MOSFET features a low thermal resistance, enabling higher operating power. It operates within a temperature range of -55°C to 150°C.

 

The component is housed in a surface-mount LFPAK56 package (SOT669), with dimensions of 5mm length and 4.1mm width, and a height of 1.1mm. It is supplied on a reel with a standard pack quantity of 1500 units.

PSMN102-200Y,115 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single

PSMN102-200Y,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN102-200Y,115 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN102-200Y,115 Features

  • 200V drain-source voltage rating.
  • 21.5A continuous drain current.
  • 102mOhm maximum on-resistance.
  • Fast switching characteristics.
  • Surface mount LFPAK56 package.

PSMN102-200Y,115 Applications

  • Suitable for Class D amplifiers.
  • Used in DC-to-DC converters.
  • Applicable for motion control.
  • Designed for switched-mode power supplies.

PSMN102-200Y,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PSMN102-200Y,115?

The maximum drain-source voltage is 200V.

What is the continuous drain current of the PSMN102-200Y,115?

The continuous drain current is 21.5A at 25°C.

What is the maximum on-resistance for this MOSFET?

The maximum drain-source on-state resistance is 102mOhm at 12A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the PSMN102-200Y,115 supplied in?

It is supplied in a surface-mount LFPAK56 package.

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