| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PSMN0R9-30YLDX is an N-channel enhancement mode MOSFET designed for high-efficiency applications, particularly at high switching frequencies. It utilizes NextPowerS3 technology, offering a logic level gate drive optimized for 4.5V operation.
Key electrical specifications include a drain-source voltage of 30V, a continuous drain current of up to 300A, and a low on-state resistance (Rds On) of 0.87 mΩ at 25A and 10V Vgs. The device boasts a total gate charge (Qg) of 109 nC and features a 'SchottkyPlus' technology for high efficiency and low spiking performance.
This MOSFET is avalanche rated and 100% tested at 190 Amps. It is housed in an LFPAK56 package, also known as Power-SO8, which is surface mountable and wave solderable. The operating temperature range is -55°C to 150°C (TJ).
Applications include on-board DC-to-DC solutions for server and telecommunications, secondary-side synchronous rectification, voltage regulator modules (VRM), point-of-load (POL) modules, and power delivery for various system components. It is also suitable for brushed and brushless motor control and power OR-ing.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30 V.
The maximum continuous drain current is 300 A.
The Rds On is typically 0.65 mΩ at 10V Vgs and 25A Id, and 0.79 mΩ at 4.5V Vgs and 25A Id. The maximum Rds On is 0.87 mΩ.
The operating temperature range is -55°C to 150°C (TJ).
The PSMN0R9-30YLDX is supplied in an LFPAK56 package, also referred to as Power-SO8 or SOT-669-4.
Yes, the PSMN0R9-30YLDX is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.