| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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72 pcs
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72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Nexperia PSMN050-80BS,118 is an N-channel MOSFET designed for industrial, communications, and domestic equipment. It offers high efficiency due to low switching and conduction losses and is suitable for standard level gate drive sources.
Key electrical specifications include a maximum drain-source voltage of 80V and a continuous drain current of 22A at 25°C. The on-state resistance (Rds On) is a maximum of 46mOhm at 10A and 10V, with a typical value of 37mOhm at 25°C. The device supports a gate-source voltage of up to ±20V and has a gate threshold voltage of 4V at 1mA. Total gate charge is 11nC at 10V.
The MOSFET is qualified to 175°C and operates within a junction temperature range of -55°C to 175°C. It has a maximum power dissipation of 56W at 25°C.
Packaged in a D2PAK (TO-263-3, D²Pak) surface-mount package, this MOSFET is designed for applications such as DC-to-DC converters, load switching, motor control, and server power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The continuous drain current is 22A at 25°C.
The maximum Rds On is 46mOhm at 10A, 10V.
The operating junction temperature range is -55°C to 175°C.
It is supplied in a D2PAK package.
Key applications include DC-to-DC converters, load switching, motor control, and server power supplies.