| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,520 pcs
|
32520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PSMN030-60YS,115 is a standard level N-channel MOSFET designed for industrial, communications, and domestic equipment. It features Advanced TrenchMOS technology for low RDSon and low gate charge, contributing to high efficiency in switching power converters.
Key electrical specifications include a drain-source voltage of 60V and a continuous drain current of 29A at 25°C (Tc). The on-state resistance (RDSon) is a maximum of 24.7 mOhm at 15A and 10V gate-source voltage, with improved performance at higher temperatures. The device operates within a junction temperature range of -55°C to 175°C and has a total power dissipation of 56W (Tc).
This MOSFET is housed in an LFPAK56 package, also referred to as Power-SO8 or SOT-669, which provides enhanced mechanical and thermal characteristics and maximum power density. The surface mountable design is suitable for various applications including DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 60 V.
The maximum continuous drain current is 29 A.
The Rds On is a maximum of 24.7 mOhm at 15A and 10V.
The operating temperature range is -55°C to 175°C.
It is in an LFPAK56, Power-SO8 package.