| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,520 pcs
|
2520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PSMN012-60YS,115 is a standard level N-channel MOSFET housed in an LFPAK package, qualified for operation up to 175°C. This device is engineered for a broad spectrum of industrial, communication, and domestic applications.
Key electrical characteristics include a maximum drain-source voltage of 60V and a continuous drain current of 59A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 11.1 mOhm at 15A and 10V gate-source voltage, with a gate charge (Qg) of 28.4 nC at 10V. The MOSFET operates within a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 89W (Tc).
Advanced TrenchMOS technology contributes to low RdsOn and low gate charge, enabling high efficiency in switching power converters. The LFPAK package offers maximum power density within a Power SO8 footprint, providing improved mechanical and thermal characteristics. This MOSFET is suitable for applications such as DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The maximum continuous drain current is 59A at 25°C (Tc).
The maximum Rds On is 11.1mOhm at 15A and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
It is supplied in the LFPAK56 and SC-100, SOT-669 package types.