| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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177,930 pcs
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177930 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PQMD13Z is a double resistor-equipped transistor (RET) in an ultra-small DFN1010B-6 package. This component integrates NPN and PNP transistors with built-in bias resistors, simplifying circuit design and reducing component count.
Key electrical specifications include a collector-emitter voltage of 50V and an output current capability of 100mA per transistor. The device features integrated bias resistors with a typical value of 4.7 kΩ for R1 and a typical R2/R1 ratio of 10. It operates with a power dissipation of 350mW and offers frequency capabilities of up to 230MHz.
Designed for applications such as low current peripheral drivers and control of IC inputs, the PQMD13Z replaces general-purpose transistors in digital applications. Its low package height of 0.37mm and surface-mount capability reduce component count and pick-and-place costs, making it suitable for mobile applications and other space-constrained designs.
The transistor is AEC-Q101 qualified, indicating its suitability for demanding automotive and industrial environments. The DFN1010B-6 (SOT1216) package is a leadless, ultra-small, surface-mounted device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PQMD13Z is 50V.
The output current capability (IO) for the PQMD13Z is 100mA.
The PQMD13Z has an integrated bias resistor R1 with a typical value of 4.7 kΩ and a typical R2/R1 ratio of 10.
The PQMD13Z is supplied in a DFN1010B-6 package.
The PQMD13Z transistor is a surface mount device.
Yes, the PQMD13Z is AEC-Q101 qualified.