| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21,020 pcs
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21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PMZB670UPE,315 is a P-channel enhancement mode MOSFET utilizing Trench MOSFET technology. It offers a drain-source voltage of 20V and a continuous drain current of 680mA at 25°C ambient temperature.
Key electrical characteristics include a maximum drain-source on-state resistance of 850mOhm at 400mA and 4.5V Vgs. The gate-source voltage range is ±8V, with a threshold voltage of 1.3V at 250µA.
This device is supplied in a leadless ultra-small DFN1006B-3 (SOT883B) surface-mount package, measuring 1.0 x 0.6 x 0.37 mm. Its ultra-thin profile makes it suitable for space-constrained applications. The operating temperature range is -55°C to 150°C.
Applications include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits where fast switching and low threshold voltage are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20V.
The maximum continuous drain current is 680mA at 25°C ambient temperature.
The maximum on-state resistance is 850mOhm at 400mA drain current and 4.5V gate-source voltage.
This MOSFET is supplied in a DFN1006B-3 (SOT883B) package.
The operating temperature range is -55°C to 150°C.