| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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51,020 pcs
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51020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PMZB390UNEYL is an N-channel enhancement mode Trench MOSFET housed in an ultra-small DFN1006B-3 package. This device offers a drain-source voltage of 30V and a continuous drain current of up to 900mA at 25°C ambient temperature. Its low on-state resistance is 470mOhm maximum at 4.5V gate-source voltage and 900mA drain current.
Key features include very fast switching, low threshold voltage, and ESD protection up to 2kV HBM. The MOSFET technology employed ensures efficient performance. The ultra-thin package profile of 0.37mm makes it suitable for space-constrained applications.
Applications for the PMZB390UNEYL include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. Its compact size and electrical characteristics make it a versatile component for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the PMZB390UNEYL is 30 V.
The maximum continuous drain current (Id) for the PMZB390UNEYL is 900mA at 25°C ambient temperature.
The Rds(on) is a maximum of 470mOhm when the drain current is 900mA and the gate-source voltage is 4.5V.
The PMZB390UNEYL is supplied in a DFN1006B-3 package, which is also known as 3-XFDFN.
The operating temperature range for the PMZB390UNEYL is -55°C to 150°C (TJ).