PMZB350UPE,315 The Nexperia PMZB350UPE,315 is a P-channel Trench MOSFET with a 20V drain-source voltage and 1A continuous drain current. It is housed in a compact DFN1006B-3 package.
Mfr Part #:

PMZB350UPE,315

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMZB350UPE,315 is a P-channel Trench MOSFET with a 20V drain-source voltage and 1A continuous drain current. It is housed in a compact DFN1006B-3 package.
✓ Total Stock: 61,020 pcs
$ Price Range: $2.27

PMZB350UPE,315 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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61,020 pcs
61020 pcs On Request 1 On Request On Request On Request On Request On Request

PMZB350UPE,315 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMZB350UPE,315 Description

Short technical summary and product information.

The Nexperia PMZB350UPE,315 is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is designed for applications requiring a 20V drain-source voltage and offers a continuous drain current of 1A at 25°C ambient temperature. The device features a low threshold voltage and very fast switching capabilities.

 

Key electrical characteristics include a maximum drain-source on-state resistance of 450mΩ at 300mA and 4.5V Vgs, and a gate threshold voltage of 950mV at 250µA. Input capacitance is rated at 127pF at 10V, and gate charge is a maximum of 1.9nC at 4.5V Vgs. The MOSFET is protected against electrostatic discharge up to 1.8kV (HBM).

 

This component is supplied in a leadless ultra-small DFN1006B-3 (SOT883B) surface-mounted device (SMD) plastic package with 3 solder lands, measuring 1.0 x 0.6 x 0.37 mm. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 360mW at 25°C ambient temperature.

 

Applications for the PMZB350UPE,315 include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits.

PMZB350UPE,315 Quick Information

Product Type: MOSFET
Canonical Name: PMZB350UPE,315 P-Channel Trench MOSFET
Subcategory: P-Channel

PMZB350UPE,315 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMZB350UPE,315 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMZB350UPE,315 Features

  • P-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 1A continuous drain current.
  • Low Rds On: 450mOhm at 4.5V Vgs.
  • Compact DFN1006B-3 package.

PMZB350UPE,315 Applications

  • Suitable for relay driver circuits.
  • Used in high-speed line drivers.
  • Ideal for high-side load switches.
  • Applicable for general switching circuits.

PMZB350UPE,315 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the PMZB350UPE,315?

The drain-source voltage is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 1A.

What is the Rds On at specified conditions?

The Rds On is a maximum of 450mOhm at 300mA Vgs and 4.5V Vgs.

What is the package type for this MOSFET?

The package type is DFN1006B-3.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

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