PMZB1200UPEYL The Nexperia USA Inc. PMZB1200UPEYL is a P-channel Trench MOSFET designed for switching applications. It features a 30V drain-source voltage and a compact DFN1006B-3 package.
Mfr Part #:

PMZB1200UPEYL

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PMZB1200UPEYL is a P-channel Trench MOSFET designed for switching applications. It features a 30V drain-source voltage and a compact DFN1006B-3 package.
✓ Total Stock: 98,603 pcs
$ Price Range: $2.27

PMZB1200UPEYL Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
71,020 pcs
71020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
27,583 pcs
27583 pcs On Request 1 On Request On Request 25+ On Request On Request

PMZB1200UPEYL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMZB1200UPEYL Description

Short technical summary and product information.

The Nexperia USA Inc. PMZB1200UPEYL is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1006B-3 (SOT883B) surface-mounted device plastic package.

 

Key electrical characteristics include a drain-source voltage of 30V and a maximum continuous drain current of 410mA at 25°C ambient temperature. The drain-source on-state resistance (RDSon) is a maximum of 1.4 Ohms at a gate-source voltage of -4.5V and a drain current of -410mA. The gate-source voltage threshold (Vgs(th)) is a maximum of 950mV at 250µA.

 

This MOSFET offers very fast switching speeds and ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM. Its ultra-thin package profile, with a height of 0.37mm, makes it suitable for space-constrained designs.

 

Applications for the PMZB1200UPEYL include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits.

PMZB1200UPEYL Quick Information

Product Type: MOSFET
Canonical Name: PMZB1200UPEYL P-Channel Trench MOSFET
Subcategory: P-Channel

PMZB1200UPEYL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMZB1200UPEYL Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMZB1200UPEYL Features

  • P-channel Trench MOSFET technology.
  • 30V drain-source voltage rating.
  • 410mA maximum continuous drain current.
  • 1.4 Ohm maximum Rds On.
  • Ultra-thin DFN1006B-3 package.

PMZB1200UPEYL Applications

  • Suitable for relay driver applications.
  • Ideal for high-speed line drivers.
  • Used in high-side load switch circuits.
  • Applicable for general switching circuits.

PMZB1200UPEYL FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the PMZB1200UPEYL?

The drain-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 410mA at 25°C ambient temperature.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 1.4 Ohm at 410mA drain current and 4.5V gate-source voltage.

What package type is the PMZB1200UPEYL in?

It is in a DFN1006B-3 package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

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