| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PMZ950UPEYL is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in an ultra-small and ultra-thin leadless DFN1006-3 (SOT883) surface-mounted device (SMD) plastic package, measuring 1.0 x 0.6 x 0.48 mm.
Key electrical characteristics include a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 500mA at 25°C ambient temperature. The drain-source on-state resistance (Rds On) is a maximum of 1.4 Ohms at 500mA and 4.5V gate-source voltage, with a typical value of 1.02 Ohms under specific test conditions. The gate-source voltage (Vgs) range is ±8V, and the gate-source threshold voltage (Vgs(th)) is 950mV typical at 250µA.
This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. It features ElectroStatic Discharge (ESD) protection greater than 1 kV HBM. The operating temperature range is -55°C to 150°C.
The device is supplied in a DFN1006-3 package, which is surface-mountable. It is designed for efficient power management in compact electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
±8 V
950mV @ 250µA
500mA
DFN1006-3
-55°C to 150°C