| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
391,020 pcs
|
391020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PMZ320UPEYL is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It offers a drain-source voltage of 30V and a maximum continuous drain current of 1A at 25°C ambient temperature.
Key electrical characteristics include a low threshold voltage and a drain-source on-state resistance of 510mΩ maximum at 1A and 4.5V gate-source voltage. The device features very fast switching speeds and ESD protection exceeding 2kV HBM.
This MOSFET is supplied in a leadless ultra-small DFN1006-3 (SOT883) surface-mounted device plastic package, measuring 1.0 x 0.6 x 0.48 mm. Its compact size and performance make it suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the PMZ320UPEYL is 30V.
The maximum continuous drain current (ID) is 1A at 25°C ambient temperature.
The Rds On is a maximum of 510mΩ at 1A drain current and 4.5V gate-source voltage.
The PMZ320UPEYL is supplied in a DFN1006-3 (SOT883) package.
The operating temperature range is -55°C to 150°C (TJ).