| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PMZ200UNEYL is an N-channel enhancement mode Trench MOSFET. It is housed in a leadless ultra-small DFN1006-3 (SOT883) surface-mounted plastic package.
This MOSFET features a drain-source voltage of 30V and a continuous drain current of 1.4A at 25°C ambient temperature. The on-state resistance (Rds On) is a maximum of 250mOhm at 1.4A and 4.5V gate-source voltage. It also offers a low threshold voltage and very fast switching capabilities.
Key electrical characteristics include a gate-source voltage range of ±8V, input capacitance of 89pF, and gate charge of 2.7nC. The device has a maximum power dissipation of 350mW at 25°C ambient temperature.
Applications for the PMZ200UNEYL include relay drivers, high-speed line drivers, and low-side load switches. Its compact package size makes it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30V.
The maximum continuous drain current is 1.4A at 25°C ambient temperature.
The maximum on-state resistance is 250mOhm at 1.4A and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The MOSFET is supplied in a DFN1006-3 (SOT-883) package.