| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PMXB65UPEZ is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1010D-3 (SOT1215) surface-mounted device (SMD) plastic package measuring 1.1 x 1.0 x 0.37 mm.
Key electrical specifications include a drain-source voltage of 12V, a continuous drain current of 3.2A at 25°C ambient temperature, and a maximum drain-source on-state resistance of 72mΩ at 3.2A and 4.5V gate-source voltage. The gate-source threshold voltage is typically -0.68V, making it suitable for portable applications. It also features ESD protection of 1.5 kV HBM.
This MOSFET is designed for applications such as high-side load switching and charging in portable devices, power management in battery-driven portables, LED drivers, and DC-to-DC converters. The exposed drain pad enhances thermal conduction.
The device operates within a temperature range of -55°C to 150°C. It is supplied in a reel package and is surface-mounted.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) of the PMXB65UPEZ MOSFET is 12V.
The continuous drain current (Id) for the PMXB65UPEZ is 3.2A at 25°C ambient temperature.
The maximum drain-source on-state resistance (Rds On) for the PMXB65UPEZ is 72mΩ at 3.2A and 4.5V gate-source voltage.
The PMXB65UPEZ MOSFET is in a DFN1010D-3 package.
The operating temperature range for the PMXB65UPEZ is -55°C to 150°C.