PMXB65ENEZ The Nexperia PMXB65ENEZ is an N-channel Trench MOSFET designed for power management in portable devices. It offers a 30V drain-source voltage and a low on-state resistance.
Mfr Part #:

PMXB65ENEZ

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMXB65ENEZ is an N-channel Trench MOSFET designed for power management in portable devices. It offers a 30V drain-source voltage and a low on-state resistance.
✓ Total Stock: 31,020 pcs
$ Price Range: $2.27

PMXB65ENEZ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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31,020 pcs
31020 pcs On Request 1 On Request On Request On Request On Request On Request

PMXB65ENEZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMXB65ENEZ Description

Short technical summary and product information.

The Nexperia PMXB65ENEZ is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in an ultra-small and thin DFN1010D-3 (SOT1215) surface-mounted device package, measuring 1.1 x 1.0 x 0.37 mm.

 

This MOSFET features a drain-source voltage of 30V and can handle a continuous drain current of up to 3.2A at 25°C ambient temperature. The drain-source on-state resistance (RDSon) is a very low 44 mΩ typically, with a maximum of 67 mΩ at 3.2A and 10V Vgs. It also includes ElectroStatic Discharge (ESD) protection up to 1 kV.

 

Key electrical characteristics include a gate-source voltage range of ±20V, input capacitance of 295 pF at 15V, and a gate charge of 11 nC at 10V. The gate threshold voltage is a maximum of 2.5V at 250µA.

 

Applications for the PMXB65ENEZ include low-side load switching and charging switches for portable devices, power management in battery-driven portables, LED drivers, and DC-to-DC converters. The exposed drain pad provides excellent thermal conduction, with a maximum power dissipation of 400mW at 25°C ambient temperature and 8.33W at 25°C case temperature.

PMXB65ENEZ Quick Information

Product Type: MOSFET
Canonical Name: PMXB65ENEZ N-Channel Trench MOSFET
Subcategory: N-Channel

PMXB65ENEZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMXB65ENEZ Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMXB65ENEZ Features

  • N-channel Trench MOSFET technology.
  • 30V drain-source voltage rating.
  • Low 67mOhm max RdsOn at 3.2A.
  • Ultra-small 1.1x1.0x0.37mm DFN1010D-3 package.
  • 1kV ElectroStatic Discharge protection.

PMXB65ENEZ Applications

  • Low-side load switch applications.
  • Charging switch for portable devices.
  • Power management in portables.
  • LED driver circuits.
  • DC-to-DC converter designs.

PMXB65ENEZ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PMXB65ENEZ?

The drain-source voltage (Vds) is 30 V.

What is the maximum continuous drain current for the PMXB65ENEZ?

The maximum continuous drain current is 3.2 A at 25°C ambient temperature.

What is the typical drain-source on-state resistance (RDSon) of the PMXB65ENEZ?

The typical RDSon is 44 mΩ at 3.2A drain current and 10V gate-source voltage.

What is the package type for the PMXB65ENEZ?

The PMXB65ENEZ is supplied in a DFN1010D-3 (SOT1215) package.

What is the operating temperature range for the PMXB65ENEZ?

The operating temperature range is -55°C to 150°C (TJ).

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