PMXB56ENZ The Nexperia PMXB56ENZ is an N-channel Trench MOSFET with a 30V drain-source voltage and 3.2A continuous drain current. It features a low Rds On of 55mOhm at 10V gate drive.
Mfr Part #:

PMXB56ENZ

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMXB56ENZ is an N-channel Trench MOSFET with a 30V drain-source voltage and 3.2A continuous drain current. It features a low Rds On of 55mOhm at 10V gate drive.
✓ Total Stock: 11,303 pcs
$ Price Range: $2.27

PMXB56ENZ Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,020 pcs
11020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
283 pcs
283 pcs On Request 1 On Request On Request 1606 On Request On Request

PMXB56ENZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMXB56ENZ Description

Short technical summary and product information.

The Nexperia PMXB56ENZ is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a leadless, ultra-small, and thin DFN1010D-3 surface-mounted device (SMD) plastic package measuring 1.1 x 1.0 x 0.37 mm.

 

Key electrical specifications include a maximum drain-source voltage of 30V and a continuous drain current of 3.2A at 25°C ambient temperature. The device exhibits a very low Drain-Source on-state resistance (RdsOn) of 55mOhm at 3.2A and 10V Vgs, with a typical value of 49mOhm. The gate-source voltage is rated at ±20V, and the gate threshold voltage is 2V at 250µA.

 

This MOSFET is designed for applications such as low-side load switching and charging in portable devices, power management in battery-driven portables, LED drivers, and DC-to-DC converters. Its exposed drain pad enhances thermal conduction, and it offers very fast switching characteristics.

 

The operating temperature range is -55°C to 150°C (TJ), and it is available in a 3-XDFN Exposed Pad package suitable for surface mounting.

PMXB56ENZ Quick Information

Product Type: MOSFET
Canonical Name: PMXB56ENZ N-Channel Trench MOSFET
Subcategory: N-Channel

PMXB56ENZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMXB56ENZ Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMXB56ENZ Features

  • N-channel Trench MOSFET technology.
  • 30V drain-source voltage rating.
  • 3.2A continuous drain current.
  • Low Rds On of 55mOhm maximum.
  • Ultra-small DFN1010D-3 package.

PMXB56ENZ Applications

  • Low-side load switch applications.
  • Charging switch for portables.
  • Power management in battery devices.
  • LED driver circuits.
  • DC-to-DC converters.

PMXB56ENZ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMXB56ENZ MOSFET?

The maximum drain-source voltage (Vds) for the PMXB56ENZ is 30V.

What is the continuous drain current rating of the PMXB56ENZ?

The PMXB56ENZ has a continuous drain current rating of 3.2A at 25°C ambient temperature.

What is the typical Rds On for the PMXB56ENZ MOSFET?

The typical Drain-Source On-state resistance (Rds On) for the PMXB56ENZ is 49 mOhm at 3.2A and 10V Vgs.

What type of package is the PMXB56ENZ MOSFET in?

The PMXB56ENZ is supplied in a DFN1010D-3 package.

What is the operating temperature range for the PMXB56ENZ?

The operating temperature range for the PMXB56ENZ is -55°C to 150°C (TJ).

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