| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia USA Inc. PMXB43UNEZ is an N-channel Trench MOSFET designed for power management applications. It offers a drain-source voltage of 20V and a continuous drain current of 3.2A at 25°C ambient temperature.
Key electrical characteristics include a low drain-source on-state resistance (RdsOn) of 42mΩ at 3.2A and 4.5V Vgs, and a gate threshold voltage of 900mV at 250µA. The MOSFET is protected by 1kV ESD protection.
This device is housed in a leadless ultra-small and thin DFN1010D-3 (SOT1215) surface-mounted plastic package measuring 1.1 x 1.0 x 0.37 mm. It features an exposed drain pad for excellent thermal conduction. The operating temperature range is -55°C to 150°C.
Applications include low-side load switching and charging for portable devices, power management in battery-driven portables, LED drivers, and DC-to-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20 V.
It is packaged in a DFN1010D-3 surface-mount package.
The maximum drain current is 3.2 A.
The typical Rds On is 42 milliohms.
The gate threshold voltage is 0.9 V at 250µA.
Yes, it is RoHS3 compliant.