| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,553 pcs
|
4553 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PMXB360ENEAZ is an 80V, N-channel enhancement mode Trench MOSFET housed in an ultra-small DFN1010D-3 (SOT1215) surface-mount package. This device features logic-level compatibility and ESD protection exceeding 2 kV HBM.
Key electrical characteristics include a maximum drain-source voltage of 80V and a continuous drain current of 1.1A at 25°C ambient temperature. The on-state resistance (Rds On) is a maximum of 450mΩ at 1.1A and 10V gate-source voltage. The gate threshold voltage is 2.7V at 250µA.
With a maximum power dissipation of 400mW (Ta) and 6.25W (Tc), and an operating temperature range of -55°C to 150°C (Tj), this MOSFET is suitable for demanding applications. Its compact size (1.1 x 1.0 x 0.37 mm) and tin-plated solderable side pads make it ideal for automated assembly processes.
Applications include relay drivers, power management in automotive and industrial systems, LED drivers, and DC-to-DC converters. The AEC-Q101 qualification further supports its use in automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the PMXB360ENEAZ is 80V.
The continuous drain current (Id) for the PMXB360ENEAZ is 1.1A at 25°C ambient temperature.
The Rds On for the PMXB360ENEAZ is a maximum of 450mΩ at 1.1A drain current and 10V gate-source voltage.
The PMXB360ENEAZ MOSFET is supplied in a DFN1010D-3 package.
The operating temperature range for the PMXB360ENEAZ MOSFET is -55°C to 150°C.
Yes, the PMXB360ENEAZ MOSFET is AEC-Q101 qualified.