PMXB120EPEZ The Nexperia PMXB120EPEZ is a P-channel Trench MOSFET designed for power management in portable devices. It features a 30V drain-source voltage and a 2.4A drain current.
Mfr Part #:

PMXB120EPEZ

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMXB120EPEZ is a P-channel Trench MOSFET designed for power management in portable devices. It features a 30V drain-source voltage and a 2.4A drain current.
✓ Total Stock: 26,060 pcs
$ Price Range: $2.27

PMXB120EPEZ Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
26,020 pcs
26020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
40 pcs
40 pcs On Request 1 On Request On Request On Request On Request On Request

PMXB120EPEZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMXB120EPEZ Description

Short technical summary and product information.

The Nexperia PMXB120EPEZ is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1010D-3 (SOT1215) surface-mounted device package, measuring 1.1 x 1.0 x 0.37 mm.

 

Key electrical characteristics include a drain-source voltage of 30V, a gate-source voltage range of ±20V, and a maximum drain current of 2.4A at 25°C ambient temperature. The drain-source on-state resistance (Rds On) is a maximum of 120mΩ at 2.4A and 10V gate-source voltage, with a typical value of 100mΩ. Input capacitance is 309pF at 15V, and gate charge is 11nC at 10V.

 

Thermal specifications include a maximum power dissipation of 400mW at 25°C ambient and 8.3W at 25°C case temperature. The operating temperature range is -55°C to 150°C.

 

This MOSFET is suitable for applications such as high-side load switches and charging switches for portable devices, power management in battery-driven portables, LED drivers, and DC-to-DC converters. It offers ESD protection up to 1kV HBM and features an exposed drain pad for excellent thermal conduction.

PMXB120EPEZ Quick Information

Product Type: MOSFET
Series: PMXB120EPEZ
Canonical Name: PMXB120EPEZ P-Channel Trench MOSFET
Subcategory: P-Channel

PMXB120EPEZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMXB120EPEZ Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMXB120EPEZ Features

  • P-channel Trench MOSFET technology.
  • 30V drain-source voltage rating.
  • 2.4A maximum continuous drain current.
  • 120mΩ maximum Rds On.
  • Ultra-thin DFN1010D-3 package.

PMXB120EPEZ Applications

  • High-side load switch.
  • Charging switch for portables.
  • Power management in portables.
  • LED driver applications.
  • DC-to-DC converters.

PMXB120EPEZ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PMXB120EPEZ?

The drain-source voltage is 30V.

What is the maximum continuous drain current for the PMXB120EPEZ?

The maximum continuous drain current is 2.4A.

What is the Rds On for the PMXB120EPEZ?

The Rds On is a maximum of 120mΩ at 2.4A and 10V.

What type of package is the PMXB120EPEZ in?

The PMXB120EPEZ is in a DFN1010D-3 package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

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