| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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695 pcs
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695 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| SVHC Present | |
| Tape & Reel |
The Nexperia PMXB120EPE is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in an ultra-small and ultra-thin leadless DFN1010D-3 (SOT1215) surface-mounted device (SMD) plastic package measuring 1.1 x 1.0 x 0.37 mm.
Key electrical specifications include a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) range of -20V to 20V. The drain-source on-state resistance (RDSon) is typically 100 mΩ at VGS = -10V and ID = -2.4A. The device also features ElectroStatic Discharge (ESD) protection up to 1 kV HBM.
Applications for the PMXB120EPE include high-side load switching and charging switches for portable devices, general power management in battery-driven portables, LED drivers, and DC-to-DC converters. The exposed drain pad provides excellent thermal conduction.
This MOSFET is supplied in a DFN1010D-3 package, suitable for surface mounting. Its compact size and thermal performance make it ideal for space-constrained applications.
The maximum drain-source voltage is -30V.
The PMXB120EPE is available in a DFN1010D-3 surface-mount package.
The junction temperature range is -55°C to 150°C.
The maximum continuous drain current is -2.4A at VGS = -10V and Tamb = 25°C.
The typical drain-source on-state resistance is 100mΩ, with a maximum of 120mΩ at VGS = -10V and ID = -2.4A.
Yes, it has 1kV HBM ESD protection.
Maximum power dissipation is 0.4W at Tamb = 25°C, and 8.33W at Tsp = 25°C.